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Low Voltage Mosfet Power Module

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Low Voltage Mosfet Power Module

Brand Name : MOTOROLA

Model Number : MHL18336

Certification : Original Factory Pack

Place of Origin : Germany

MOQ : 5pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 285PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Feature : Third Order Intercept: 46 dBm Typ

Feature2 : Power Gain: 30 dB Typ (@ f =1850 MHz)

Feature3 : Excellent Phase Linearity and Group Delay Characteristics

Feature4 : Ideal for Feedforward Base Station Applications

Storage Temperature Range : –40 to +100 °C

Voltage : 30V

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 MHL18336 PCS BAND RF LINEAR LDMOS AMPLIFIER

Designed for ultra–linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA.

• Third Order Intercept: 46 dBm Typ

• Power Gain: 30 dB Typ (@ f =1850 MHz)

• Excellent Phase Linearity and Group Delay Characteristics

• Ideal for Feedforward Base Station Applications

Low Voltage Mosfet Power ModuleLow Voltage Mosfet Power Module

Rating Symbol Value Unit
DC Supply Voltage VDD 30 Vdc
RF Input Power Pin +10 dBm
Storage Temperature Range Tstg –40 to +100 °C

ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System)

Characteristic Symbol Min Typ Max Unit
Supply Current IDD — 500 525

Power Gain

(f =1850 MHz)

 Gp 29 30 31 dB

Gain Flatness

(f = 1800–1900 MHz)

 GF — 0.2 0.4 dB

Power Output @ 1 dB Comp.

(f = 1850 MHz)

 Pout 1 dB 35 36 — dBm

Input VSWR

(f = 1800–1900 MHz)

 VSWRin — 1.2:1 1.5:1

Third Order Intercept

(f1 = 1847 MHz, f2 = 1852 MHz)

 ITO 45 46 — dBm

Noise Figure

(f = 1850 MHz)

 NF — 4.2 4.5 dB


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